savantic semiconductor product specification silicon pnp power transistors 2SB1187 d escription with to-220fa package low saturation voltage complement to type 2sd1761 excellent dc current gain characteristics wide safe operating area applications for low frequency power amplifier applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -6 a t c =25 30 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1187 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma , i b =0 -60 v v (br)cbo collector-base breakdown voltage i c =-50a , i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-50a , i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a ;i b =-0.2a -1.0 v v besat base-emitter saturation voltage i c =-2a ;i b =-0.2a -1.5 v i cbo collector cut-off current v cb =-60v ;i e =0 -10 a i ebo emitter cut-off current v eb =-4v; i c =0 -10 a h fe dc current gain i c =-0.5a ; v ce =-5v 60 320 f t transition frequency i c =-0.5a ; v ce =-5v 12 mhz c ob output capacitance i e =0 ; v cb =-10v ,f=1mhz 100 pf
savantic semiconductor product specification 3 silicon power transistors 2SB1187 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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